? 1998 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c; r gs = 1 m w 900 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c16a i dm t c = 25 c, pulse width limited by t jm 64 a i ar t c = 25 c16a e ar t c = 25 c45mj dv/dt i s i dm , di/dt 100 a/ m s, v dd v dss , 5 v/ns t j 150 c, r g = 2 w p d t c = 25 c 360 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 m a 900 v v gs(th) v ds = v gs , i d = 5 ma 2.0 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 ? v dss t j =25 c25 m a v gs = 0 v t j = 125 c 250 m a r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.65 w pulse test, t 300 m s, duty cycle d 2 % n-channel enhancement mode high dv/dt, low t rr , hdmos tm family to-247 ad (ixfh) features l international standard packages l low r ds (on) hdmos tm process l rugged polysilicon gate cell structure l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect l fast intrinsic rectifier applications l dc-dc converters l battery chargers l switched-mode and resonant-mode power supplies l dc choppers l ac motor control l temperature and lighting controls advantages l easy to mount with 1 screw (to-247) (isolated mounting screw hole) or mounting clip or spring (plus 247 tm ) l space savings l high power density (tab) hiperfet tm power mosfets 97547(2/98) plus 247 tm (ixfx) g d c (tab) preliminary data IXFH16N90 v dss = 900 v ixfx16n90 i d25 =16 a r ds( on ) = 0.65 w t rr 200 ns
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixfh 16n90 ixfx 16n90 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 6 10 s c iss 4500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 430 pf c rss 150 pf t d(on) 27 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 30 ns t d(off) r g = 2 w (external), 120 n s t f 30 ns q g(on) 220 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 30 nc q gd 85 nc r thjc 0.35 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 16 a i sm repetitive; 64 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 m s, duty cycle d 2 % t rr t j =25 c 200 ns t j = 125 c 350 ns q rm t j =25 c1 m c t j = 125 c2 m c i rm t j =25 c10a t j = 125 c15a i f = i s -di/dt = 100 a/ m s, v r = 100 v dim. millimeter i nches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 plus 247 tm outline
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